Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide

Microelectronic Engineering

Volumn 84, Issue 1, 2007, Pages 7-10

  Zhao, C ^a   Witters, T ^a   Breimer, P ^b   Maes, J ^c   Caymax, M ^a   De Gendt, S ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c ASMB   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYSTERESIS; MOS CAPACITORS; OZONE; SILICON COMPOUNDS;

FREQUENCY DISPERSION; INTERFACIAL STATE DENSITY; LAYER COMPOSITION;

HAFNIUM COMPOUNDS;

EID: 35448976396     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.07.003     Document Type: Article

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