Very low bias stress in n-type organic single-crystal transistors

Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

  Barra, M ^a   Di Girolamo, F V ^a   Minder, N A ^b   Gutierrez Lezama I ^b   Chen, Z ^c   Facchetti, A ^c,d   Morpurgo, A F ^b   Cassinese, A ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b UNIVERSITY OF GENEVA   (Switzerland)

^c POLYERA CORPORATION   (United States)

^d NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEST VALUE; BIAS STRESS; CHARACTERISTIC TIME; LOW BIAS; N-CHANNEL; ORDERS OF MAGNITUDE; ORGANIC SINGLE-CRYSTAL TRANSISTOR; SOURCE-DRAIN CURRENT;

GATE DIELECTRICS; ORGANIC FIELD EFFECT TRANSISTORS;

VACUUM;

EID: 84859531898     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3698341     Document Type: Article

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