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Applied Physics A: Materials Science and Processing

Volumn 96, Issue 2, 2009, Pages 481-487

Organic film thickness influence on the bias stress instability in sexithiophene field effect transistors

(5) Di Girolamo, F V a Aruta, C a Barra, M a D'angelo, P a,b Cassinese, A a

a UNIVERSITY OF NAPLES FEDERICO II (Italy)

b CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; MOBILITY VALUE; ORGANIC LAYERS; SEXITHIOPHENE; STRESS PARAMETER; VACUUM DEPOSITING;

CARRIER MOBILITY; MAGNETIC FILMS; MESFET DEVICES; MOLECULAR BEAM EPITAXY; STRUCTURAL ANALYSIS; X RAY DIFFRACTION ANALYSIS;

FIELD EFFECT TRANSISTORS;

EID: 67650444032 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5250-y Document Type: Article

Times cited : (34)

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