Bias-induced threshold voltages shifts in thin-film organic transistors

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3184-3186

  Gomes, H L ^a   Stallinga, P ^a   Dinelll, F ^b   Murgia, M ^b   Biscarini, F ^b   De Leeuw, D M ^c   Muck, T ^d   Geurts, J ^d   Molenkamp, L W ^d   Wagner, V ^e  

^a UNIVERSITY OF ALGARVE   (Portugal)

^b CNR   (Italy)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d UNIVERSITY OF WÜRZBURG   (Germany)

^e JACOBS UNIVERSITY BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CARRIER MOBILITY; CHARGE CARRIERS; CURVE FITTING; DEPOSITION; DIFFERENTIAL EQUATIONS; MATHEMATICAL MODELS; SEMICONDUCTING FILMS; SUBLIMATION; THRESHOLD VOLTAGE;

DRAIN CURRENTS; ELECTRICAL STABILITY; ENERGY BARRIERS; METAL-INSULATOR-SEMICONDUCTOR (MIS) TRANSISTORS; THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS;

EID: 2442630235     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1713035     Document Type: Article

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