Bias-stress effect in pentacene organic thin-film transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 1003-1008

  Ryu, Kevin Kyungbum ^a   Nausieda, Ivan ^a   He, David Da ^a   Akinwande, Akintunde Ibitayo ^a   Bulović, Vladimir ^a   Sodini, Charles G ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Field effect transistor (FETs); Organic compounds; Reliability; Stability; Stress; Thin film transistors (TFTs)

Indexed keywords

BIAS STRESS; CARRIER TRAPPING; CHANNEL CARRIER DENSITY; DRAIN BIAS; EMPIRICAL EQUATIONS; FIELD-EFFECT TRANSISTOR (FETS); GATE BIAS; GATE VOLTAGES; MODEL-BASED; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; PENTACENES; STRESS CONDITION; STRESS EFFECTS; STRESS TIME;

FIELD EFFECT TRANSISTORS; MESFET DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77951620633     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2044282     Document Type: Article

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