Charge trapping instabilities of sexithiophene thin film transistors

Synthetic Metals

Volumn 101, Issue 1, 1999, Pages 608-609

  Schoonveld, W A ^a   Oostinga, J B ^a   Vrijmoeth, J ^a,b   Klapwijk, T M ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b Uniphase Netherlands BV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; DERIVATIVES; EVAPORATION; MOS DEVICES; OLIGOMERS; SEMICONDUCTOR DEVICE STRUCTURES; STABILITY; SUBLIMATION; THIN FILMS; THRESHOLD VOLTAGE; CHARGE CARRIERS; ELECTRON TRAPS; PLASTIC FILMS; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILM TRANSISTORS;

CHARGE TRAPPING INSTABILITY; POLYTHIOPHENE; SEXITHIOPHENE THIN FILM TRANSISTORS; SINGLE CRYSTAL THIN FILMS; THRESHOLD VOLTAGE SHIFT;

THIN FILM TRANSISTORS; CONDUCTIVE PLASTICS;

POLYTHIOPHENES; STRESS VOLTAGE; THRESHOLD SHIFT;

EID: 0032590827     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(98)01249-1     Document Type: Article

References (12)

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