Bias stress effect in low-voltage organic thin-film transistors

Applied Physics A: Materials Science and Processing

Volumn 95, Issue 1, 2009, Pages 139-145

  Zschieschang, Ute ^a   Weitz, R Thomas ^a   Kern, Klaus ^a,b   Klauk, Hagen ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR); RESPIRATORY MECHANICS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

BIAS STRESS; DRAIN-SOURCE VOLTAGES; GATE-BIAS STRESS; LOW VOLTAGES; ORGANIC THIN-FILM TRANSISTORS; PENTACENE; SELF-ASSEMBLED MONOLAYERS; STRETCHED EXPONENTIAL FUNCTIONS; THRESHOLD VOLTAGE SHIFTS; TIME CONSTANTS; TIME DEPENDENTS; TRAPPED CARRIERS;

THRESHOLD VOLTAGE;

EID: 60749115976     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-5019-8     Document Type: Article

References (29)

1. M.J. Powell 1983 Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors Appl. Phys. Lett. 43 597
2. A.R. Hepburn J.M. Marshall C. Main M.J. Powell C. van Berkel 1986 Metastable defects in amorphous-silicon thin-film transistors Phys. Rev. Lett. 56 2215
3. C. van Berkel M.J. Powell 1987 Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors Appl. Phys. Lett. 51 1094
4. M.J. Powell S.C. Deane R.B. Wehrspohn 2002 Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon Phys. Rev. B 66 155212
5. R. Libsch J. Kanicki 1993 Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors Appl. Phys. Lett. 62 1286
6. Y. Kaneko A. Sasano T. Tsukada 1991 Characterization of instability in amorphous silicon thin-film transistors J. Appl. Phys. 69 7301
7. D. Knipp R.A. Street A. Völkel J. Ho 2003 Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport J. Appl. Phys. 93 347
8. A. Salleo R.A. Street 2003 Light-induced bias stress reversal in polyfluorene thin-film transistors J. Appl. Phys. 94 471
9. R.A. Street A. Salleo M.L. Chabinyc 2003 Bipolaron mechanism for bias-stress effects in polymer transistors Phys. Rev. B 68 085316
10. H.L. Gomes P. Stallinga M. Cölle D.M. de Leeuw F. Biscarini 2006 Electrical instabilities in organic semiconductors caused by trapped supercooled water Appl. Phys. Lett. 88 082101
11. T. Sekitani S. Iba Y. Kato Y. Noguchi T. Someya T. Sakurai 2005 Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effects Appl. Phys. Lett. 87 073505
12. A. Benor A. Hoppe V. Wagner D. Knipp 2007 Electrical stability of pentacene thin film transistors Org. Electron. 8 749
13. C. Goldmann D.J. Gundlach B. Batlogg 2006 Evidence of water-related discrete trap formation in pentacene single-crystal field-effect transistors Appl. Phys. Lett. 88 063501
14. S.D. Wang T. Minari T. Miyadera Y. Aoyagi K. Tsukagoshi 2008 Bias stress instability in pentacene thin-film transistors: Contact resistance change and channel threshold voltage shift Appl. Phys. Lett. 92 063305
15. W.B. Jackson J.M. Marshall M.D. Moyer 1989 Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon Phys. Rev. B 39 1164
16. G. Gu M.G. Kane S.C. Mau 2007 Reversible memory effects and acceptor states in pentacene-based organic thin-film transistors J. Appl. Phys. 101 014504
17. R. Kohlrausch 1854 Theorie des elektrischen Rückstandes in der Leidner Flasche Ann. Phys. Chem. (Poggendorff) 91 179
18. M.N. Berberan-Santos E.N. Bodunov B. Valeur 2005 Mathematical functions for the analysis of luminescence decays with underlying distributions 1. Kohlrausch decay function (stretched exponential) Chem. Phys. 315 171
19. H.W. Zan S.C. Kao 2008 The effects of drain-bias on the threshold voltage instability in organic TFTs IEEE Electron Device Lett. 29 155
20. 2 high-k gate dielectric grown by anodic oxidation or deposited by sol-gel Microelectron. Reliab. 47 372
21. H. Klauk U. Zschieschang M. Halik 2007 Low-voltage organic thin-film transistors with large transconductance J. Appl. Phys. 102 074514
22. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd edn. (Wiley, Hoboken, 2007)
23. G. Horowitz R. Hajlaoui H. Bouchriha R. Bourguiga M. Hajlaoui 1998 The concept of threshold voltage in organic field-effect transistors Adv. Mater. 10 923
24. G. Horowitz R. Hajlaoui D. Fichou A. El Kassmi 1999 Gate voltage dependent mobility of oligothiophene field-effect transistors J. Appl. Phys. 85 3202
25. E.J. Meijer C. Tanase P.W.M. Blom E. van Veenendaal B.H. Huisman D.M. de Leeuw T.M. Klapwijk 2002 Switch-on voltage in disordered organic field-effect transistors Appl. Phys. Lett. 80 3838
26. J.Z. Chen I.C. Cheng 2008 Abnormal temperature-dependent stability of on-plastic a-Si:H thin film transistors fabricated at 150°C J. Appl. Phys. 104 044508
27. H. Klauk U. Zschieschang R.T. Weitz H. Meng F. Sun G. Nunes D.E. Keys C.R. Fincher Z. Xiang 2007 Organic transistors based on di(phenylvinyl) anthracene: Performance and stability Adv. Mater. 19 3882
28. S.G.J. Mathijssen M. Cölle H. Gomes E.C.P. Smits B. de Boer I. McCulloch P.A. Bobbert D.M. de Leeuw 2007 Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors Adv. Mater. 19 2785
29. P. Stallinga H.L. Gomes F. Biscarini M. Murgia D.M. de Leeuw 2004 Electronic transport in field-effect transistors of sexithiophene J. Appl. Phys. 96 5277