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Volumn 99, Issue 6, 2011, Pages

Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

(7) Kayis, C a Ferreyra, R A a Wu, M a Li, X a Ozgur U a Matulionis, A b Morkoc H a

a Virginia Commonwealth University (United States)

b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

DC ELECTRICAL; DRAIN BIAS; ELECTRICAL STRESS; FREQUENCY RANGES; GATE BIAS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HOT-PHONON EFFECTS; LATTICE-MATCHED; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE MEASUREMENTS; PHONON-PLASMON COUPLING; STRESS EFFECTS; ULTRAFAST DECAY;

CUTOFF FREQUENCY; DEGRADATION; DRAIN CURRENT; PHONONS; THERMAL NOISE; TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 84859339507 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3624702 Document Type: Article

Times cited : (17)

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