Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1539-1543

  Kayis, Cemil ^a   Leach, Jacob H ^a   Zhu, C Y ^a   Wu, Mo ^a   Li, X ^a   Özgür, Ümit ^a   Morkoç, Hadis ^a   Yang, X ^b   Misra, Veena ^b   Handel, Peter H ^c  

^a Virginia Commonwealth University   (United States)

^b North Carolina State University   (United States)

^c UNIVERSITY OF MISSOURI ST LOUIS   (United States)

Author keywords

GaN MOSHFET; Gate dielectric; Generation recombination; Low frequency noise

Indexed keywords

ALGAN/GAN; DRAIN BIAS; ELEVATED TEMPERATURE; GENERATION-RECOMBINATION; GENERATION-RECOMBINATION PROCESS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGHER FREQUENCIES; LOW FREQUENCY; LOW-FREQUENCY NOISE; METAL OXIDE SEMICONDUCTOR; MOS-HFETS; MOSHFET; NOISE SPECTRA; POTENTIAL BARRIERS; SOURCE-DRAIN; TIME CONSTANTS; TRAP ENERGY;

ELECTRIC FIELDS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); THERMAL NOISE;

FIELD EFFECT TRANSISTORS;

EID: 79955622668     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000873     Document Type: Article

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