Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 2, 2011, Pages 65-67

  Ardaravicius L ^a   Liberis, J ^a   Kiprijanovic O ^a   Matulionis, A ^a   Wu, M ^b   Morkoc H ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b Virginia Commonwealth University   (United States)

Author keywords

AlInN AlN GaN; Drift velocity; High electric fields; Hot electrons; Hot phonon decay; Semiconductor heterostructures

Indexed keywords

ALINN/ALN/GAN; DRIFT VELOCITIES; HIGH ELECTRIC FIELDS; HOT-PHONON DECAY; SEMICONDUCTOR HETEROSTRUCTURES;

CRYSTALS; ELECTRIC FIELDS; ELECTRON DIFFRACTION; ELECTRON GAS; ELECTRONS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PHONONS; RESONANCE; TWO DIMENSIONAL ELECTRON GAS; VELOCITY;

HOT ELECTRONS;

EID: 79251587754     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004502     Document Type: Letter

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