Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7939, Issue , 2011, Pages

  Kayis, Cemil ^a   Zhu, C Y ^a   Wu, Mo ^a   Li, Xing ^a   Özgür, Ümit ^a   Morkoç, Hadis ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

degradation; electrical stress; GaN HFET; Low frequency noise; reliability

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ALGAN/GAN HFETS; BIAS CONDITIONS; DC STRESS; DRAIN BIAS; ELECTRICAL STRESS; FREQUENCY RANGES; GAN HFET; GATE BIAS; GATE VOLTAGES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE MEASUREMENTS; LOWER NOISE; NOISE POWER; NOISE SPECTRA; STRESS DURATION; TESTED DEVICES; TRAP GENERATION;

ACTIVATION ENERGY; DC POWER TRANSMISSION; DEGRADATION; EQUIPMENT; GALLIUM NITRIDE; THERMAL NOISE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79955776552     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.875723     Document Type: Conference Paper

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