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Volumn 96, Issue 13, 2010, Pages

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

(14) Leach, J H a Zhu, C Y a Wu, M a Ni, X a Li, X a Xie, J a Ozgur U a Morko H a Liberis, J b Sermuksnis E b Matulionis, A b Paskova, T c Preble, E c Evans, K R c

a Virginia Commonwealth University (United States)

b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

c KYMA TECHNOLOGIES INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN CUTOFF FREQUENCY; ELECTRON VELOCITY; FE-DOPED; GAN SUBSTRATE; GATE BIAS; GATE LENGTH; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGH FIELD; HOT PHONONS; LONGITUDINAL OPTICAL PHONONS; NON EQUILIBRIUM; SEMI-INSULATING; TRANSIT TIME;

CUTOFF FREQUENCY; ELECTRON GAS; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PHONONS; TWO DIMENSIONAL ELECTRON GAS; VELOCITY;

FIELD EFFECT TRANSISTORS;

EID: 77950505006 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3358392 Document Type: Article

Times cited : (32)

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