Clustered insulated gate bipolar transistor in the super junction concept: The SJ-TCIGBT

IEEE Transactions on Power Electronics

Volumn 27, Issue 6, 2012, Pages 3072-3080

  Luther King, Ngwendson ^a   Sweet, Mark ^a   Madathil Sankara Narayanan, Ekkanath ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Clustered insulated gate bipolar transistor (CIGBT); insulated gate bipolar transistor (IGBT); MOS bipolar transistor; MOS controlled thyristor; power semiconductor device; super junction IGBT (SJ IGBT); Super Junction Trench CIGBT (SJ TCIGBT); Trench CIGBT (TCIGBT)

Indexed keywords

ANODE VOLTAGES; CLUSTERED INSULATED GATE BIPOLAR TRANSISTOR (CIGBT); CONVERTER EFFICIENCY; POWER SEMICONDUCTOR DEVICES; SATURATION CURRENT; SIMULATION EVALUATION; SIMULTANEOUS REDUCTION; SUPER JUNCTIONS; THYRISTOR STRUCTURES; TRENCH CIGBT (TCIGBT);

ELECTRIC SWITCHGEAR; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; THYRISTORS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 84859070425     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2162965     Document Type: Article

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