Performance of a trench PMOS gated, planar, 1.2 kV clustered insulated gate bipolar transistor in NPT technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 164-167

  Luther King, N ^a   Sweet, M ^a   Sankara Narayanan, E M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

2D SIMULATIONS; CIRCUIT PERFORMANCE; CURRENT SATURATION; GATE STRUCTURE; GATE VOLTAGES; POWER DEVICES; SATURATION CURRENT; SHORT CIRCUIT; TRENCH GATES;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRIC NETWORK ANALYSIS; ELECTRIC SWITCHGEAR; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 72449176481     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158027     Document Type: Conference Paper

References (11)

1. B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer, "Insulated gate rectifier (IGR): A new power switching device," in Proc.Tech. Dig. IEDM, 1982, pp. 264-267
2. M. Kitagawa, I. Omura, S. Hasegawa, T. Inoue, and A. Nakagawa, "A4500V injection enhanced Insulated Gate Bipolar Transistor (IEGT) in a mode similar to a thyristor," in IEDM Tech. Dig., 1993, pp. 679-682.
3. H. Takahashi, H Haruguchi, H. Hagino, T. Yamada, "Carrier stored Trench-gate Bipolar Transistor -A Novel Power Device for High voltage application-," Proceedings of the 8th.ISPSD 96, pp349-pp352,1996
4. V. A. Temple, "MOS controlled thyristors," in IEDM Tech. Dig., 1984, pp. 282-285.
5. B. J. Baliga, The MOS-gated emitter switched thyristor, IEEE Electron Device Lett. 11 (1990) 75-77
6. E. M. Sankara Narayanan, et al., "Clustered Insulated Gate Bipolar Transistor (CIGBT): A New Power Semiconductor Device," Proceeding l0th IWPSD, 1999, pp. 1307-1312.
7. K. Vershinin, et al., "Influence of the design parameters on the performance of 1.7 kV, NPT, planar Clustered Insulated Gate Bipolar Transistor (CIGBT)" ISPSD'04, pp. 269-272
8. K. Vershinin et al "Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non-Punch-Through Technology", ISPSD'06
9. M. Sweet et al., "Experimental Demonstration of 3.3kV Clustered Insulated Gate Bipolar Transistor in Non-Punch-Through Technology", ISPSD'08, pp. 48-51
10. Sysnopsys TCAD Sentaurus Device Package, 2007
11. G. K. Wachutka, Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling,[ IEEE Trans. Comput-Aided Design Integr. Circuits Syst., vol. 9, no. 11, pp. 1141-1149, Nov. 1990.