The 3.3kV semi-SuperJunction IGBT for increased cosmic ray induced breakdown immunity

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 168-171

  Antoniou, Marina ^a   Udrea, Florin ^a   Bauer, Friedhelm ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING; COOLMOS; FAILURE-IN-TIME; MANUFACTURING IS; NEW DEVICES; ORDERS OF MAGNITUDE; SUPERJUNCTIONS; TRENCH IGBT; VOLTAGE RANGES;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; COSMIC RAYS; COSMOLOGY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 77949955330     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158028     Document Type: Conference Paper

References (7)

1. Zeller HR. "Cosmic Ray induced failures in high power semiconductor devices" Solid State Electron 1995 38(12): 2041-6.
2. Bauer FD. "Calculation of cosmic ray limited maximum DC blocking voltages of high high voltage silicon PIN diodes" Solid State Electron 2008 52(7): 1052-7G.
3. M. Antoniou, F. Udrea, and F. Bauer. "Optimisation of SuperJunction Bipolar Transistor for ultra-fast switching applications." pp. 101-104, Proceedings of ISPSD, 2007.
4. F. Bauer, "The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages", Solid State Electronics, vol. 48, pp. 705-714, 2004.
5. F. Udrea "3D Power Semiconductor Devices" US Patent 6111289
6. Kwang-Hoon Oh et al., "A Simulation Study on Novel Field Stop IGBTs Using Superjunction", IEEE Transactions On Electron Devices, Vol. 53, No. 4, April 2006
7. Porst A. "Ultimate limits of the IGBT (MCT) for high voltage applications in conjunction with a diode." In Proceedings of IEEE International Symposium on Power Semiconductors and ICs, 1993.