-
1
-
-
0032256942
-
A new generation of high voltage MOSFETs breaks the limit line of silicon
-
Deboy G, Marz M, Stengel JP, Strack H, Tihanyi J, Weber H. A new generation of high voltage MOSFETs breaks the limit line of silicon. In: Proc. IEDM, 1998. p. 683-5.
-
(1998)
Proc. IEDM
, pp. 683-685
-
-
Deboy, G.1
Marz, M.2
Stengel, J.P.3
Strack, H.4
Tihanyi, J.5
Weber, H.6
-
2
-
-
0031633245
-
Simulated superior performances of semiconductor super junction devices
-
Fujihira T, Miyasaka Y. Simulated superior performances of semiconductor super junction devices. In: Proc. ISPSD'98 1998. p. 423-6.
-
(1998)
Proc. ISPSD'98
, pp. 423-426
-
-
Fujihira, T.1
Miyasaka, Y.2
-
3
-
-
0002406132
-
COOLMOS - An important milestone towards a new power MOSFET generation
-
Lorenz L, Marz M, Deboy G. COOLMOS - an important milestone towards a new power MOSFET generation. In: Proc. Power Conversion, 1998. p. 151-60.
-
(1998)
Proc. Power Conversion
, pp. 151-160
-
-
Lorenz, L.1
Marz, M.2
Deboy, G.3
-
4
-
-
0032598940
-
Properties of COOLMOS between 420 and 80 K - The ideal device for cryogenic applications
-
Schlogl AE, Deboy G, Lorenzen HW, Linnert U, Schulze HJ, Stengl JP. Properties of COOLMOS between 420 and 80 K - the ideal device for cryogenic applications. In: Proc. ISPSD'99, 1999. p. 91-4.
-
(1999)
Proc. ISPSD'99
, pp. 91-94
-
-
Schlogl, A.E.1
Deboy, G.2
Lorenzen, H.W.3
Linnert, U.4
Schulze, H.J.5
Stengl, J.P.6
-
6
-
-
0003662682
-
COOLMOS - A new approach toward an idealized power switch
-
Lausanne, Switzerland
-
Lorenz L. COOLMOS - a new approach toward an idealized power switch. In: Proc. EPE Conference, Lausanne, Switzerland, 1999.
-
(1999)
Proc. EPE Conference
-
-
Lorenz, L.1
-
7
-
-
0032598936
-
Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
-
Shenoy PM, Bhalla A, Dolny GM. Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET. In: Proc. ISPSD'99, 1999. p. 99-102.
-
(1999)
Proc. ISPSD'99
, pp. 99-102
-
-
Shenoy, P.M.1
Bhalla, A.2
Dolny, G.M.3
-
8
-
-
1242282768
-
-
ISE Integrated Systems Engineering AG, Zürich, Switzerland
-
ISE TCAD release 7 reference manuals, ISE Integrated Systems Engineering AG, Zürich, Switzerland.
-
ISE TCAD Release 7 Reference Manuals
-
-
-
9
-
-
0021787429
-
A new vertical power MOSFET structure with extremely reduced on-resistance
-
Ueda D., Takaki H., Kano G. A new vertical power MOSFET structure with extremely reduced on-resistance. IEEE Trans. Electron Devices. ED-32(1):1985;2-7.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, Issue.1
, pp. 2-7
-
-
Ueda, D.1
Takaki, H.2
Kano, G.3
-
10
-
-
0034449682
-
The field stop IGBT (FS IGBT) - A new power device concept with a great improvement potential
-
Laska T, Münzer M, Pfirsch F, Schaeffer C, Schmidt T. The field stop IGBT (FS IGBT) - a new power device concept with a great improvement potential. In: Proc. ISPSD'00, 2000. p. 355-8.
-
(2000)
Proc. ISPSD'00
, pp. 355-358
-
-
Laska, T.1
Münzer, M.2
Pfirsch, F.3
Schaeffer, C.4
Schmidt, T.5
-
11
-
-
0029709974
-
Punchthrough type GTO with buffer layer and homogeneous low efficiency anode
-
Eicher S, Bauer F, Zeller HR, Weber A, Fichtner W. Punchthrough type GTO with buffer layer and homogeneous low efficiency anode. In: Proc. ISPSD'96, 1996. p. 261-4.
-
(1996)
Proc. ISPSD'96
, pp. 261-264
-
-
Eicher, S.1
Bauer, F.2
Zeller, H.R.3
Weber, A.4
Fichtner, W.5
-
12
-
-
0029726762
-
Design considerations for a 7 kV/3 kA GTO with transparent anode and buffer layer
-
Eicher S, Bauer F, Zeller HR, Weber A, Fichtner W. Design considerations for a 7 kV/3 kA GTO with transparent anode and buffer layer. In: Proc. PESC'96, 1996. p. 29-34.
-
(1996)
Proc. PESC'96
, pp. 29-34
-
-
Eicher, S.1
Bauer, F.2
Zeller, H.R.3
Weber, A.4
Fichtner, W.5
-
13
-
-
0034449679
-
Analysis of the forward biased safe operating area of the super junction MOSFET
-
Zhang B, Xu Z, Huang AQ. Analysis of the forward biased safe operating area of the super junction MOSFET. In: Proc. ISPSD'00, 2000. p. 61-4.
-
(2000)
Proc. ISPSD'00
, pp. 61-64
-
-
Zhang, B.1
Xu, Z.2
Huang, A.Q.3
-
14
-
-
0036045158
-
The MOS controlled super junction transistor (SJBT): A new, highly efficient, high power semiconductor device for medium to high voltage applications
-
Bauer F. The MOS controlled super junction transistor (SJBT): a new, highly efficient, high power semiconductor device for medium to high voltage applications. In: Proc. ISPSD'02, 2002. p. 197-200.
-
(2002)
Proc. ISPSD'02
, pp. 197-200
-
-
Bauer, F.1
-
16
-
-
0030721270
-
Carrier injection enhancement effect of high voltage MOS devices - Device physics and design concept
-
Omura I, Ogura T, Sugiyama K, Ohashi H. Carrier injection enhancement effect of high voltage MOS devices - device physics and design concept. In: Proc. ISPSD'97, 1997. p. 217-20.
-
(1997)
Proc. ISPSD'97
, pp. 217-220
-
-
Omura, I.1
Ogura, T.2
Sugiyama, K.3
Ohashi, H.4
-
17
-
-
0030658655
-
Hole bypassing N+ emitter structure of the Trench IGBT for the safe switching operation
-
Kim H-S, Lee T-S, Yun C-M, Oh K-H, Im P-G, Kim D-J. Hole bypassing N+ emitter structure of the Trench IGBT for the safe switching operation. In: Proc. ISPSD'97, 1997. p. 269-72.
-
(1997)
Proc. ISPSD'97
, pp. 269-272
-
-
Kim, H.-S.1
Lee, T.-S.2
Yun, C.-M.3
Oh, K.-H.4
Im, P.-G.5
Kim, D.-J.6
-
18
-
-
0021477430
-
Suppressing latchup in insulated gate transistors
-
Baliga B.J., Adler M.S., Gray P.V., Love R.P. Suppressing latchup in insulated gate transistors. IEEE Electron Devices Lett. EDL-5(8):1984;323-325.
-
(1984)
IEEE Electron Devices Lett.
, vol.EDL-5
, Issue.8
, pp. 323-325
-
-
Baliga, B.J.1
Adler, M.S.2
Gray, P.V.3
Love, R.P.4
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