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Volumn 48, Issue 5, 2004, Pages 705-714

The super junction bipolar transistor: A new silicon power device concept for ultra low loss switching applications at medium to high voltages

Author keywords

Bipolar power transistor; Super junction MOSFET; Switching power device

Indexed keywords

CATHODES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ENERGY CONVERSION; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

EID: 1242276409     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.017     Document Type: Article
Times cited : (66)

References (18)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.