Carrier stored trench-gate bipolar transistor (CSTBT) - a novel power device for high voltage application

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 349-352

  Takahashi, H ^a   Haruguchi, H ^a   Hagino, H ^a   Yamada, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC NETWORK ANALYSIS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS;

BLOCKING VOLTAGE; CARRIER STORED TRENCH GATE BIPOLAR TRANSISTOR; HIGH VOLTAGE APPLICATIONS; TURN OFF CURRENT CAPABILITY;

BIPOLAR TRANSISTORS;

EID: 0029709790     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)