Analysis of the forward biased safe operating area of the super junction MOSFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 61-64

  Zhang, B ^a   Xu, Z ^a   Huang, A Q ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; FAILURE ANALYSIS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

CARRIER CURRENT CONDUCTION; CHARGE IMBALANCE; DRIFT REGION DOPING; FORWARD BIASED SAFE OPERATING AREA;

MOSFET DEVICES;

EID: 0034449679     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. Theory of semiconductor super junction devices
2. A new generation of high voltage MOSFETs breaks the limit line of silicon
3. COOLMOS™ - A new milestone in high voltage power MOS
4. Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
5. Simulated superior performance of semiconductor superjunction devices
6. Predicted electrical characteristics of 4500 V super multi-resurf MOSFETs
7. A new MOS gate thyristor-the single-gate emitter controlled thyristor (SECT)