Progress in MOS-controlled bipolar devices and edge termination technologies

Microelectronics Journal

Volumn 35, Issue 3, 2004, Pages 235-248

  Sankara Narayanan, E M ^a   Spulber, O ^a   Sweet, M ^a   Bose, J V S C ^a   Verchinine, K ^a   Luther King, N ^a   Moguilnaia, N ^a   De Souza, M M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Insulated gate bipolar transistor; Semiconductor; Thyristors

Indexed keywords

AMPLIFICATION; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; MOS DEVICES; MOSFET DEVICES; THYRISTORS;

POWER SEMICONDUCTOR DEVICES; SWITCHING LOSSES;

MICROELECTRONICS;

EID: 0742268511     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00186-1     Document Type: Conference Paper

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