The field stop IGBT (FS IGBT) - A new power device concept with a great improvement potential

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 355-358

  Laska, T ^a   Munzer M ^a   Pfirsch, F ^a   Schaeffer, C ^a   Schmidt, T ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES;

DYNAMIC LOSSES; FIELD STOP LAYER; TRENCH TRANSISTOR CELL;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034449682     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Characterization of silicon direct bonding methodology for high performance IGBT
2. Features and application of new 1200V trench gate IGBT modules
3. Optimizing the vertical IGBT structure - the NPT concept as the most economic and electrically ideal solution for a 1200V IGBT
4. Analysis on device structures for next generation IGBT
5. 600V trench IGBT in comparison with planar IGBT
6. Development of the next generation of insulated gate bipolar transistors based on trench technology
7. 1200V-trench-IGBT study with square short circuit SOA
8. 6.5kV IGBT-modules
9. Ultrathin-wafer technology for a new 600V-NPT-IGBT
10. 3rd generation of 1200V IGBT modules