The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors

Microelectronics Reliability

Volumn 52, Issue 4, 2012, Pages 757-760

  Xiao, Yongguang ^a   Tang, Minghua ^a   Li, Jiancheng ^b   Jiang, Bo ^a   He, John ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^c Geological Survey of Canada Sidney   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE-GATE; ELECTRICAL CHARACTERISTIC; FERROELECTRIC FIELD EFFECT TRANSISTORS; INTERFACE LAYER; LOW-POWER DISSIPATION; NEGATIVE CAPACITANCE; PERFORMANCE IMPROVEMENTS; SUBTHRESHOLD; SUBTHRESHOLD CHARACTERISTICS;

CAPACITANCE; FERROELECTRICITY; FIELD EFFECT TRANSISTORS;

SURFACE POTENTIAL;

EID: 84857790279     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.11.006     Document Type: Article

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