Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 50, Issue 1, 2003, Pages 5-14

  Lue, Hang Ting ^a   Wu, Chien Jang ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; HYSTERESIS; INTEGRAL EQUATIONS; MISFET DEVICES; POLARIZATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MODELS;

DEVICE MODELING; FERROELECTRIC MEMORY FIELD EFFECT TRANSISTOR; FERROELECTRIC RANDOM ACCESS MEMORY; METAL FERRORELECTRIC METAL INSULATOR SEMICONDUCTOR;

FERROELECTRIC DEVICES;

EID: 0345419054     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2003.1176521     Document Type: Article

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