Haracterization of (Bi,Nd)4Ti3O12/HfO 2/p-type Si structures for MFIS-FeRAM application

Integrated Ferroelectrics

Volumn 79, Issue 1, 2006, Pages 211-218

  Tabuchi, Yoshiaki ^a   Aizawa, Kouzi ^a   Tamura, Tetsuro ^b   Takahashi, Kazuhiro ^a   Hoko, Hiromasa ^b   Kato, Kazumi ^c   Arimoto, Yoshihiro ^b   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

BNT; FeRAM; HfO2; MFIS; Transistor

Indexed keywords

ELECTRIC POTENTIAL; FERROELECTRIC THIN FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SOLUTIONS;

BNT; FERAM; HFO2; MFIS;

FIELD EFFECT TRANSISTORS;

EID: 33745756664     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600659621     Document Type: Article

References (6)

1. J. Evans and K. Womack, IEEE J. Solid State Circuits, 23, 1171 (1988).
2. S. Y. Wu, IEEE Trans. Electron Devices ED-21, 499 (1974).
3. M. Noda, Y. Matsumuro, H. Sugiyama, and M. Okuyama, Jpn. J. Appl. Phys. 38, 2275 (1999).
4. S. Sakai and R. Ilangovan, IEEE Election. Dev. Lett. 25, 369 (2004).
5. K. Aizawa, B.-E. Park, Y. kawashima, K. Takahashi, and H. Ishiwara, Appl. Phys. Lett. 85, 3199-3201 (2004).
6. H. Maiwa, N. Iizawa, D, Togawa, and T. Hyashi, Appl. Phys. Lett. 82, 1760 (2003).