Influence of the ferroelectric-electrode interface on the characteristics of MFIS-FETs

Solid-State Electronics

Volumn 53, Issue 6, 2009, Pages 563-566

  Zhang, J ^a   Tang, M H ^a   Tang, J X ^a   Yang, F ^a   Xu, H Y ^a   Zhao, W F ^a   Zhou, Y C ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

C V; I V; Interface layer; MFIS FET structure; Threshold voltage

Indexed keywords

EID: 67349193596     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.03.006     Document Type: Letter

References (22)

1. Miller S.L., and McWhorter P.J. Physics of the ferroelectric nonvolatile memory field-effect transistor. J Appl Phys 72 12 (1992) 5999-6010
2. 12. Jpn J Appl Phys 40 2001 (2001) 5567-5579
3. x insulator layer. J Appl Phys 93 7 (2003) 4137-4143
4. Setter N., Damjanovic D., Eng L., Fox G., Gevorgian S., et al. Ferroelectric thin films: review of materials, properties, and applications. J Appl Phys 100 5 (2006) 051606
5. 2/p-type Si structures for MFIS-FeRAM application. Integr Ferroelectr 79 (2006) 211-218
6. Lue H.T., Wu C.J., and Tseng T.Y. Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory. IEEE Trans Ultrason Ferroelectr Freq Contr 50 5 (2003) 5-14
7. Alpay S.P., Misirlioglu I.B., Nagarajan V., and Ramesh R. Can interface dislocation degrade ferroelectric properties?. Appl Phys Lett 85 11 (2004) 2044-2046
8. Tagantsev A.K., and Stolichnov I.A. Injection-controlled size effect on switching of ferroelectric thin films. Appl Phys Lett 7 49 (1999) 1326-1328
9. Cillessen J.F., Prins M.W.J., and Wolf R.M. Thickness dependence of the switching voltage in all-oxide ferroelectric thin film capacitors prepared by pulsed laser deposition. J Appl Phys 81 6 (1996) 2777-2783
10. 3 epitaxial films. Appl Phys Lett 83 16 (2003) 3356-3358
11. 3 thin films grown by chemical vapor deposition. J Appl Phys 82 5 (1997) 2497-2504
12. 3+z thin films grown by chemical vapor deposition. J Appl Phys 86 8 (1999) 4565-4575
13. Lebedev N.I., and Sigov A.S. Surface inhomogeneities and coercive field of thin ferroelectric films. Integr Ferroelectr 4 (1994) 21-24
14. Tagantsev A.K., Pawlaczyk C.Z., Brooks K., and Setter N. Built-in electric filed assisted nucleation and coercive fields in ferroelectric thin films. Integr Ferroelectr 4 (1994) 1-12
15. Mokry P., Tagantsev A.K., and Setter N. Size effect on permittivity in ferroelectric polydomain thin films. Phys Rev B 70 17 (2004) 172107
16. 7-x. Appl Phys Lett 84 4 (2004) 585-853
17. 3 film capacitors. J Appl Phys 93 3 (2003) 1725-1730
18. Sze S.M. Physics of semiconductor devices. 2nd ed. (1983), Wiley, New York
19. 2/Si structures. Appl Phys Lett 85 19 (2004) 4448-4450
20. 2 buffer layers. Jap J Appl Phys 44 8 (2005) 6218-6220
21. Sinnamon L.J., Saad M.M., Bowman R.M., and Gregg J.M. Exploring grain size as a cause for "dead-layer" effects in thin film capacitors. Appl Phys Lett 81 4 (2002) 703-705
22. Taur Y., and Ning T.H. Fundamentals of modern VLSI devices (1998), Cambridge Univ Press, Cambridge