SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 39, Issue 12, 2010, Pages 2681-2686

Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis

(4) Arslan, Engin a Bütün, Serkan a Şafak, Yasemin b Ozbay, Ekmel a

a BILKENT UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

Author keywords

admittance; AlInN heterostructures; Capacitance; conductance; trap center

Indexed keywords

ADMITTANCE; ADMITTANCE ANALYSIS; CONDUCTANCE; CONDUCTION BAND EDGE; ENERGY SEPARATIONS; EQUIVALENT CIRCUIT MODEL; EXPERIMENTAL DATA; FREQUENCY RANGES; FREQUENCY-DEPENDENT; FREQUENCY-DEPENDENT CAPACITANCE; HETEROSTRUCTURES; INSULATOR LAYER; METAL CONTACTS; ORDER OF MAGNITUDE; SURFACE STATE; SURFACE TRAP-STATES; SYSTEMATIC STUDY; TIME CONSTANTS; TRAP CENTER; TRAP STATE;

ALUMINUM; CAPACITANCE; CHARGE TRAPPING; CRYSTALS; MEMS; METAL ANALYSIS; PASSIVATION; SILICON NITRIDE;

HETEROJUNCTIONS;

EID: 78049529653 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1367-1 Document Type: Conference Paper

Times cited : (32)

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