Electrical contact properties between the accumulation layer and metal electrodes in ultrathin poly(3-hexylthiophene)(P3HT) field effect transistors

ACS Applied Materials and Interfaces

Volumn 3, Issue 5, 2011, Pages 1574-1580

  Park, Byoungnam ^a   Aiyar, Avishek ^a   Hong, Jung Il ^a   Reichmanis, Elsa ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

Charge injection; Charge transport; Contact resistance; Contact limited; Field effect mobility; P3HT

Indexed keywords

ACCUMULATION LAYERS; CHANNEL RESISTANCE; CONTACT PROPERTIES; CONTACT-LIMITED; ELECTRICAL CONTACTS; FIELD-EFFECT MOBILITIES; FOUR-POINT; GOLD ELECTRODES; HIGH SENSITIVITY; IN-BUILDINGS; IN-FIELD; METAL ELECTRODES; ORGANIC SENSORS; P3HT; POLY-3-HEXYLTHIOPHENE; SHEET RESISTANCE MEASUREMENTS; ULTRA-THIN; VOLTAGE DROP;

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CONJUGATED POLYMERS; CONTACT RESISTANCE; DROPS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; ELECTRODES; MESFET DEVICES; POLYMER FILMS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84857434397     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am200143g     Document Type: Article

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