Gate voltage dependent resistance of a single organic semiconductor grain boundary

Journal of Physical Chemistry B

Volumn 105, Issue 20, 2001, Pages 4538-4540

  Kelley, Tommie W ^a   Frisbie, C Daniel ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRANSFER; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; GRAIN BOUNDARIES; GRAIN GROWTH; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SILICA; VAPOR DEPOSITION;

BOUNDARY LENGTH; CONDUCTING PROBE ATOMIC FORCE MICROSCOPY; SEXITHIOPHENE;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 0035942925     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp004519t     Document Type: Letter

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32. B = kT In(4/25) = -45 meV.
33. B = kT In(30) ̃ 100 meV.
34. 2.
35. Gate voltage excursions more negative than -10 V resulted in a drain-to-gate short for this particular device.