Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors

Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 6137-6141

  Wang, Guangming ^a   Swensen, James ^a   Moses, Daniel ^a   Heeger, Alan J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; HEAT TREATMENT;

GATE INSULATORS;

SEMICONDUCTING POLYMERS;

EID: 0037974522     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1568526     Document Type: Article

References (10)

1. Z. Bao, A. Dodabalapur, and A. J. Lovinger, Appl. Phys. Lett. 69, 4108 (1996).
2. J. H. Schön, A. Dodabalapur, Z. Bao, Ch. Kloc. O. Schenker, and B. Batlogg, Nature (London) 410, 189 (2001).
3. H. Sirringhaus, N. Tessler, and R. H. Friend, Science 280, 1741 (1998).
4. H. Sirringhaus, P. J. Brown, R. H. Friend et al., Nature (London) 401, 685 (1999).
5. Z. Bao, Y. Feng, A. Dodabalapur, V. R. Raju, and A. J. Lovinger, Chem. Mater. 9, 1299 (1997).
6. G. Xu, Z. Bao, and J. T. Groves, Langmuir 16, 1834 (2000).
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., (Wiley, New York, 1981).
8. D. Moses, H. Okumoto, C. H. Lee, A. J. Heeger, T. Ohnishi, and T. Noguchi, Phys. Rev. B 54, 4748 (1996).
9. A. Dodabalapur, L. Torsi, and H. E. Katz, Science 268, 270 (1995).
10. T. W. Hagler, K. Pakbaz, K. F. Voss, and A. J. Heeger, Phys. Rev. 44, 8652 (1991).