Advanced direct-polishing process development of non-porous ultralow-k dielectric fluorocarbon with plasma treatment on Cu interconnects

Journal of the Electrochemical Society

Volumn 159, Issue 4, 2012, Pages

  Gu, Xun ^a   Nemoto, Takenao ^a   Tomita, Yugo ^a   Teramoto, Akinobu ^a   Kuroda, Rihito ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CU-INTERCONNECTS; DAMASCENE INTERCONNECTS; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTIC; MECHANICAL EFFECTS; PLASMA TREATMENT; PROCESS CONDITION; PROCESS DEVELOPMENT; PROTECTIVE LAYERS; SURFACE NITROGEN; ULTRA-LOW-K DIELECTRICS;

ELECTRIC PROPERTIES; NITROGEN PLASMA; PLASMA APPLICATIONS;

POLISHING;

EID: 84857387135     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.049204jes     Document Type: Article

References (32)

1. M. Ueki, M. Tagami, F. Ito, T. Onodera, I. Kume, N. Furutake, H. Yamamoto, J. Kawahara, N. Inoue, K. Hijioka, T. Takeuchi, S. Saito, N. Okada, and Y. Hayashi, in Technical Digest of International Electron Device Meeting, San Francisco, p. 619 (2008).
2. Y. Iba, S. Ozaki, M. Sasaki, Y. Kobayashi, T. Kirimura, and Y. Nakata, Microelectron. Eng., 87, 451 (2010). 10.1016/j.mee.2009.07.027
3. T. C. Chang, P. T. Liu, Y. J. Mei, Y. S. Mor, T. H. Perng, Y. L. Yang, and S. M. Sze, J. Vac. Sci. Technol. B, 17 (5), 2325 (1999). 10.1116/1.590912
4. N. Posseme, T. Chevolleau, O. Jouert, and L. Vallier, J. Vac. Sci. Technol. B, 21 (6), 2432 (2003). 10.1116/1.1627337
5. K. Yonekura, K. Goto, M. Matsuura, N. Fujiwara, and K. Tsujimoto, Jpn. J. Appl. Phys., 44 (5A), 2976 (2005). 10.1143/JJAP.44.2976 (Pubitemid 41012880)
6. A. Ishikawa, Y. Shishida, T. Yamanishi, N. Hata, T. Nakayama, N. Fujii, H. Tanaka, H. Matsuo, K. Kinoshita, and T. Kikkawa, J. Electrochem Soc., 153 (7), 692 (2006). 10.1149/1.2196787 (Pubitemid 43838729)
7. T. Ohmi, M. Hirayama, and A. Teramoto, J. Phys. D: Appl. Phys., 39, 1 (2006). 10.1088/0022-3727/39/1/R01 (Pubitemid 41811042)
8. A. Itoh, A. Inokuchi, S. Yasuda, A. Teramoto, T. Goto, M. Hirayama, and T. Ohmi, Jpn. J. Appl. Phys., 47, 2515 (2008). 10.1143/JJAP.47.2515
9. X. Gu, T. Nemoto, Y. Tomita, A. Shirotori, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, S. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, Jpn. J. Appl. Phys., 50 (5), 05EB02 (2011). 10.1143/JJAP.50.05EB02
10. X. Gu, T. Nemoto, Y. Tomita, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, S. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, in Proceedings of Advanced Metallization Conference 2010: 20th Asian Session, Tokyo, p. 54 (2010).
11. X. Gu, T. Nemoto, Y. Tomita, A. Shirotori, R. Duyos-Mateo, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, S. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, in Proceedings of the International Interconnects Technology Conference, IEEE, Dresden, p. 1 (2011).
12. X. Gu, Y. Tomita, T. Nemoto, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, R. Kuroda, S. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, in Proceedings of Advanced Metallization Conference 2011: 21th Asian Session, Tokyo, p. 20 (2011).
13. K. Endo and T. Tatsumi, J. Appl. Phys., 78 (2), 1370 (1995). 10.1063/1.360313
14. K. Endo, T. Tatusmi, Y. Matusbara, and T. Horiuchi, Jpn. J. Appl. Phys., 37, 1809 (1998). 10.1143/JJAP.37.1809
15. S. Kondo, K. Fukaya, N. Ohashi, T. Miyazaki, H. Nagano, Y. Wada, T. Ishibashi, M. Kato, K. Yoneda, E. Soda, S. Nakao, K. Ishigami, and N. Kobayashi, in Proceedings of the International Interconnects Technology Conference, IEEE, Burlingame, p. 164 (2006).
16. S. Kondo, B. U. Yoon, S. G. Lee, S. Tokitoh, K. Misawa, T. Yoshie, N. Ohashi, and N. Kobayashi, in Technical Diges of Symposium on VLSI Technology, Honolulu, p. 68 (2004).
17. M. Kodera, T. Takahashi, and G. Mimamihaba, Jpn. J. Appl. Phys., 49, 04DB07 (2010). 10.1143/JJAP.49.04DB07
18. X. Gu, T. Nemoto, Y. Sampurno, J. Cheng, S. Theng, A. Philipossian, Y. Zhuang, A. Teramoto, T. Ito, S. Sugawa, and T. Ohmi, Mater. Res. Soc. Symp. Proc., 1157, 157 (2009). 10.1557/PROC-1157-E13-03
19. Y. Sampurno, X. Gu, T. Nemoto, Y. Zhuang, A. Teramoto, A. Philipossian, and T. Ohmi, Jpn. J. Appl. Phys., 49, 05FC01 (2010). 10.1143/JJAP.49.05FC01
20. X. Gu, T. Nemoto, A. Teramoto, S. Sugawa, and T. Ohmi, in Proceedings of International Conference on PlanarizationCMP Technology 2009, Fukuoka, p. 22 (2009).
21. X. Gu, T. Nemoto, A. Teramoto, T. Ito, and T. Ohmi, J. Electrochem. Soc., 156 (6), 409 (2009). 10.1149/1.3106106
22. X. Gu, T. Nemoto, A. Teramoto, R. Hasebe, T. Ito, and T. Ohmi, Solid State Phenomena, 145, 381 (2009). 10.4028/www.scientific.net/SSP.145-146.381
23. X. Gu, T. Nemoto, A. Teramoto, T. Ito, and T. Ohmi, ECS Trans., 19 (7), 103 (2009). 10.1149/1.3123779
24. X. Gu, T. Nemoto, Y. Tomita, A. Teramoto, S. Sugawa, and T. Ohmi, in Proceedings of Advanced Metallization Conference 2010: 20th Asian Session, Tokyo, p. 160 (2010).
25. X. Gu, T. Nemoto, Y. Tomita, A. Teramoto, S. Sugawa, and T. Ohmi, Jpn. J. Appl. Phys., 50 (5), 05EC07 (2011). 10.1143/JJAP.50.05EC07
26. X. Gu, T. Nemoto, A. Teramoto, M. Sakuragi, S. Sugawa, and T. Ohmi, J. Electrochem. Soc., 158 (11), 1145 (2011). 10.1149/2.046111jes
27. U. Gelius, B. Wannberg, P. Baltzer, H. Fellner-Feldegg, G. Carlsson, C. G. Johansson, J. Larsson, P. Munger, and G. Vergerfos, J. Electron Spectrosc. Relat. Phenom, 52 (1), 747 (1990). 10.1016/0368-2048(90)85063-F
28. X. Gu, Y. Tomita, T. Nemoto, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, R. Kuroda, S. Kuroki, K. Kawase, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, Jpn. J. Appl. Phys., (to be published).
29. X. Gu, T. Nemoto, Y. Tomita, R. D. Mateo, A. Teramoto, S. Kuroki, S. Sugawa, and T. Ohmi, in Proceedings of International Conference on PlanarizationCMP Technology 2010, Arizona, p. 51 (2010).
30. X. Gu, T. Nemoto, Y. Tomita, R. Duyos Mateo, A. Tetamoto, S. Kuroki, S. Sugawa, and T. Ohmi, ECS Trans., 34 (1), 653 (2011). 10.1149/1.3567653
31. X. Gu, Y. Tomita, T. Nemoto, A. Teramoto, R. D. Mateo, T. Sakai, R. Kuroda, S. Kuroki, S. Sugawa, and T. Ohmi, in Proceedings of International Conference on PlanarizationCMP Technology 2011, Seoul, p. 150 (2011).
32. X. Gu, T. Nemoto, Y. Tomita, A. Teramoto, R. Kuroda, S. Kuroki, K. Kawase, S. Sugawa, and T. Ohmi, IEEE Trans. Electron Devices, (to be accepted).