Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond

Japanese Journal of Applied Physics

Volumn 50, Issue 5 PART 2, 2011, Pages

  Gu, Xun ^a   Nemoto, Takenao ^a,b   Tomita, Yugo ^a   Shirotori, Akihide ^a   Miyatani, Kotaro ^b   Saito, Akane ^b   Kobayashi, Yasuo ^b   Teramoto, Akinobu ^a   Kuroki, Shin Ichiro ^a   Nozawa, Toshihisa ^b   Matsuoka, Takaaki ^b   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DOPED SILICON OXIDES; CU DAMASCENE INTERCONNECTS; CU-INTERCONNECTS; DAMASCENE LINES; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTIC; LOW K DIELECTRICS; POROUS LOW-K; ULTRA-LOW-K DIELECTRICS;

CHEMICAL VAPOR DEPOSITION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS SILICON; SILICON COMPOUNDS; SILICON OXIDES;

DIELECTRIC MATERIALS;

EID: 79957447092     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.05EB02     Document Type: Article

References (31)

1. M. Ueki, M. Tagami, F. Ito, T. Onodera, I. Kume, N. Furutake, H. Yamamoto, J. Kawahara, N. Inoue, K. Hijioka, T. Takeuchi, S. Saito, N. Okada, and Y. Hayashi: IEDM Tech. Dig., 2008, p. 26.7.
2. A. Ishikawa, Y. Shishida, T. Yamanishi, N. Hata, T. Nakayama, N. Fujii, H. Tanaka, H. Matsuo, K. Kinoshita, and T. Kikkawa: J. Electrochem. Soc. 153 (2006) 692.
3. B. U. Yoon, S. Kondo, S. Tokitoh, A. Namiki, K. Misawa, K. Inukai, N. Ohashi, and N. Kobayashi: Proc. Int. Interconnect Technology Conf., 2004, p. 13.3.
4. T. Yoda, K. Fujita, H. Miyajima, R. Nakata, N. Miyashita, and N. Hayasaka: Jpn. J. Appl. Phys. 44 (2005) 3872.
5. T. Yoda, Y. Nakasaki, H. Hashimoto, K. Fujita, H. Miyajima, M. Shimada, R. Nakata, N. Kaji, and N. Hayasaka: Jpn. J. Appl. Phys. 44 (2005) 75.
6. M. R. Baklanov, Q. T. Le, E. Kesters, F. Iacopi, J. Van Aelst, H. Struyf, W. Boullart, S. Vanhaelemeersch, and K. Maex: Proc. Int. Interconnect Technology Conf., 2004, p. 10.1.
7. C. Goldberg, L. Mercade, S. Filipiak, and S. Crown: Proc. Int. Interconnect Technology Conf., 2004, p. 209.
8. S. Kondo, K. Fukaya, K. Yamada, T. Miyazaki, M. Fujita, D. Abe, S. Kunisaki, T. Enomoto, and S. Tominaga: Microelectron. Eng. 84 (2007) 2615.
9. K. Endo and T. Tatsumi: J. Appl. Phys. 78 (1995) 1370.
10. K. Endo, T. Tatusmi, Y. Matusbara, and T. Horiuchi: Jpn. J. Appl. Phys. 37 (1998) 1809.
11. H. Yang, D. J. Tweet, Y. Ma, and T. Nguyen: Appl. Phys. Lett. 73 (1998) 1514.
12. Y. Ma, H. Yang, J. Guo, C. Sathe, and J. Nordgren: Appl. Phys. Lett. 72 (1998) 3353.
13. H. Yang, D. R. Evans, T. Nguyen, L. H. Stecker, B. Ulrich, and S. T. Hsu: Mater. Res. Soc. Symp. Proc. 565 (1999) 129.
14. T. Ohmi, M. Hirayama, and A. Teramoto: J. Phys. D 39 (2006) R1.
15. A. Itoh, A. Inokuchi, S. Yasuda, A. Teramoto, T. Goto, M. Hirayama, and T. Ohmi: Jpn. J. Appl. Phys. 47 (2008) 2515.
16. H. Tanaka, Z. Chuanjie, Y. Hayakawa, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi: Jpn. J. Appl. Phys. 42 (2003) 1911.
17. T. Goto, M. Hirayama, H. Yamauchi, M. Moriguchi, S. Sugawa, and T. Ohmi: Jpn. J. Appl. Phys. 42 (2003) 1887.
18. T. Goto, H. Yamauchi, T. Kato, M. Terasaki, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi: Jpn. J. Appl. Phys. 43 (2004) 1784.
19. U. Gelius, B. Wannberg, P. Baltzer, H. Fellner-Feldegg, G. Carlsson, C. G. Johansson, J. Larsson, P. Munger, and G. Vergerfos: J. Electron Spectrosc. Relat. Phenom. 52 (1990) 747.
20. X. Gu, T. Nemoto, Y. Sampurno, J. Cheng, S. Theng, A. Philipossian, Y. Zhuang, A. Teramoto, T. Ito, S. Sugawa, and T. Ohmi: Mater. Res. Soc. Symp. Proc. 1157 (2009) E13-03.
21. Y. Sampurno, X. Gu, T. Nemoto, Y. Zhuang, A. Teramoto, A. Philipossian, and T. Ohmi: Jpn. J. Appl. Phys. 49 (2010) 05FC01.
22. X. Gu, T. Nemoto, A. Teramoto, S. Sugawa, and T. Ohmi: Proc. Int. Conf. Planarization/CMP Technology, 2009, p. 22.
23. X. Gu, T. Nemoto, A. Teramoto, T. Ito, and T. Ohmi: J. Electrochem. Soc. 156 (2009) 409.
24. X. Gu, T. Nemoto, A. Teramoto, R. Hasebe, T. Ito, and T. Ohmi: Solid State Phenom. 145-146 (2009) 381.
25. X. Gu, T. Nemoto, A. Teramoto, T. Ito, S. Sugawa, and T. Ohmi: ECS Trans. 19 [7] (2009) 103.
26. X. Gu, T. Nemoto, A. Teramoto, T. Ito, and T. Ohmi: Abstr. ECS, 2009, p. 744.
27. A. Ksiazczak, H. Boniuk, and S. Cudzilo: J. Therm. Anal. Calorimetry 74 (2003) 569.
28. M. Schulze, K. Bolwin, E. Gulzow, and W. Schnurnberger: Fresenjus J. Anal. Chem. 353 (1995) 778.
29. R. Tsu, J. W. McPherson, and W. R. McKee: Proc. Int. Reliability Physics Symp., 2000, p. 348.
30. Zs. Tokei, Y. L. Li, and G. P. Beyer: Microelectron. Reliab. 45 (2005) 1436.
31. N. Oda, S. Chikaki, T. Kubota, S. Nakao, K. Tomioka, E. Soda, N. Nakamura, J. Nogawa, Y. Kawashima, R. Hayashi, and S. Saito: IEDM Tech. Dig., 2008, p. 26.6.