Tribological effects of brush scrubbing in post chemical mechanical planarization cleaning on electrical characteristics in novel non-porous low-k dielectric fluorocarbon on Cu interconnects

Japanese Journal of Applied Physics

Volumn 50, Issue 5 PART 2, 2011, Pages

  Gu, Xun ^a   Nemoto, Takenao ^a   Tomita, Yugo ^a   Teramoto, Akinobu ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BRUSH SCRUBBING; CHEMICAL MECHANICAL PLANARIZATIONS; CU DAMASCENE INTERCONNECTS; CU-INTERCONNECTS; DAMAGE REDUCTION; DOWN PRESSURE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; LOW K DIELECTRICS; OPTIMUM PROCESS CONDITIONS; PARTICLE REMOVAL EFFICIENCY; PLANARIZATION; POST-CMP CLEANING; ROTATION RATE; ULTRA-LOW-K DIELECTRICS; YIELD LOSS;

CHEMICAL CLEANING; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; INTEGRATED CIRCUITS; MECHANICAL PROPERTIES; REMOVAL; ROTATION; TRIBOLOGY;

BRUSHES;

EID: 79957462830     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.05EC07     Document Type: Article

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