Tribological study of brush scrubbing in post-chemical mechanical planarization cleaning in non-porous ultralow-k dielectric Cu interconnects

Journal of the Electrochemical Society

Volumn 158, Issue 11, 2011, Pages

  Gu, Xun ^a   Nemoto, Takenao ^a   Teramoto, Akinobu ^a   Sakuragi, Misa ^b   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BRUSH SCRUBBING; CONTACT CHARACTERISTICS; CU DAMASCENE INTERCONNECTS; CU-INTERCONNECTS; DAMAGE REDUCTION; DOWN PRESSURE; FLUOROCARBON FILMS; HIGH SHEAR; LOW K DIELECTRICS; MECHANICAL PLANARIZATION; PARTICLE REMOVAL; PARTICLE REMOVAL EFFICIENCY; PLANARIZATION; ROTATION RATE; ULTRA-LOW-K DIELECTRICS; ULTRALOW-K; YIELD LOSS;

CHEMICAL ANALYSIS; CHEMICAL CLEANING; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FLOW OF FLUIDS; INTEGRATED CIRCUITS; MECHANICAL PROPERTIES; PRESSURE EFFECTS; ROTATION; TRIBOLOGY;

BRUSHES;

EID: 80054014583     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.046111jes     Document Type: Article

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