Damage-free CMP towards 32nm-node porous low-k (k=1.6)/Cu integration

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 68-69

  Kondo, S ^a   Yoon, B U ^a   Lee, S G ^a   Tokitoh, S ^a   Misawa, K ^a   Yoshie, T ^a   Ohashi, N ^a   Kobayashi, N ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANNEALING; CAPACITANCE; DELAMINATION; ELASTIC MODULI; HYDROPHOBICITY; PERMITTIVITY; POROUS MATERIALS; STRENGTH OF MATERIALS;

PLASMA TREATMENT; SHEET RESISTANCE; ULTRA LOW-K (ULK) FILMS; WETTABILITY;

COPPER;

EID: 4544318338     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345397     Document Type: Conference Paper

References (2)

1. S. Sone et al., VLSI Symposium, p. 125 (2003).
2. S. Kondo et al., IITC, p. 86 (2003).