Mechanism of porous low-k film damage induced by plasma etching radicals

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 451-456

  Iba, Y ^a   Ozaki, S ^a   Sasaki, M ^a   Kobayashi, Y ^a   Kirimura, T ^a   Nakata, Y ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Ashing; Damage; Etching; Low k; Plasma; Porous; Radical

Indexed keywords

ASHING; ASHING DAMAGE; BLANKET WAFERS; DAMAGE; DAMAGE DIFFUSION; ETCHING CONDITION; ETCHING RATE; GAS PRESSURES; GAS-FLOW RATIO; NANO-CLUSTERING SILICAS; PLASMA CONDITIONS; POROUS LOW-K; RADICAL TREATMENT; RF-POWER; SIDEWALL DAMAGE; WAFER STAGE;

FLUORINE; ORGANIC POLYMERS; PLASMA ETCHING; PLASMAS; SILICA; SILICON;

SILICON WAFERS;

EID: 74449093527     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.07.027     Document Type: Article

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