Direct CMP on porous low-k film for damage-less Cu integration

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 164-166

  Kondo, S ^a   Fukaya, K ^b   Ohashi, N ^a   Miyazaki, T ^c   Nagano, H ^b   Wada, Y ^b   Ishibashi, T ^b   Kato, M ^a   Yoneda, K ^a,b,c   Soda, E ^a   Nakao, S ^a   Ishigami, K ^a   Kobayashi, N ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b EBARA CORPORATION   (Japan)

^c SANYO CHEMICAL INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; COPPER ALLOYS; HYDROPHOBICITY; NANOTECHNOLOGY; OPTICAL DESIGN; SURFACE ACTIVE AGENTS; TECHNOLOGY;

CA-P LAYER; CLEANING CHEMICALS; CMP SLURRIES; CU DAMASCENE; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; K VALUES; MOISTURE UPTAKE; MOLECULAR SIZES; POROUS LOW-K; SIOC FILM; SIOC SURFACE; WATERMARK GENERATION;

COPPER;

EID: 50249185893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648677     Document Type: Conference Paper

References (3)

1. M. Matsuura et al., ADMETA, p. 120 (2003).
2. S. Kondo et al., VLSI, p. 68 (2004). [3] M. Miyamoto et al., PacRim-CMP, p. 62 (2005).
3. K. Yoneda et al., IITC, p. 220 (2005).