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Volumn 50, Issue 4 PART 2, 2011, Pages

Annealing effects on Ge/SiO2 interface structure in wafer-bonded germanium-on-insulator substrates

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; ANNEALING EFFECTS; GE SUBSTRATES; GERMANIUM-ON-INSULATOR; INTERFACE STRUCTURES;

AMORPHOUS SILICON; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; GERMANIUM; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING;

ANNEALING;

EID: 79955459905 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.04DA13 Document Type: Article

Times cited : (11)

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