Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

Applied Physics Letters

Volumn 93, Issue 7, 2008, Pages

  Yang, Haigui ^a   Wang, Dong ^a   Nakashima, Hiroshi ^a   Gao, Hongye ^a   Hirayama, Kana ^a   Ikeda, Ken Ichi ^a   Hata, Satoshi ^a   Nakashima, Hideharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GERMANIUM; METALS; MOSFET DEVICES; OPTICAL DESIGN; PASSIVATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ALLOYS; SULFATE MINERALS; TRANSISTORS;

CHANNEL MOBILITIES; DRY OXIDATION; GE-CONDENSATION; GE-ON-INSULATOR; HIGH-MOBILITY; METAL-OXIDE SEMICONDUCTORS; MOBILITY DEGRADATION; SIGE-ON-INSULATOR; TOP SURFACE;

HOLE MOBILITY;

EID: 50249085326     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2972114     Document Type: Article

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