Zinc-oxide thin-film transistor with self-aligned source/drain regions doped with implanted boron for enhanced thermal stability

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 393-399

  Ye, Zhi ^a   Lu, Lei ^a   Wong, Man ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Boron; implantation; thin film transistor (TFT); transparent electronics; zinc oxide (ZnO)

Indexed keywords

HEAT TREATMENT TEMPERATURE; HIGH TEMPERATURE; LOW TEMPERATURES; PASSIVATION LAYER; PROCESS CONDITION; RAPID DIFFUSION; SELF-ALIGNED; SOURCE/DRAIN REGIONS; TRANSPARENT ELECTRONICS;

BORON; DOPING (ADDITIVES); HYDROGEN; ION IMPLANTATION; SEMICONDUCTING ORGANIC COMPOUNDS; THERMODYNAMIC STABILITY; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84856298407     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2175398     Document Type: Article

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