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Applied Surface Science

Volumn 257, Issue 7, 2011, Pages 2498-2502

Boron doped ZnO thin films fabricated by RF-magnetron sputtering

(4) Gao, Li a Zhang, Yan b Zhang, Jian Min a Xu, Ke Wei c

a SHAANXI NORMAL UNIVERSITY (China)

b LABORATOIRE STRUCTURES (France)

c XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

Boron doped; RF magnetron sputtering; ZnO thin film

Indexed keywords

ANNEALING; BORON; CALCULATIONS; CARRIER CONCENTRATION; ENERGY GAP; II-VI SEMICONDUCTORS; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL BAND GAPS; OPTICAL FILMS; OPTICAL LATTICES; SUBSTRATES; ZINC OXIDE; ZINC SULFIDE;

BORON-DOPED; FERMI-LEVEL SHIFTS; FIRST-PRINCIPLES CALCULATION; PREFERRED ORIENTATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; WURTZITE STRUCTURE; ZNO THIN FILM;

THIN FILMS;

EID: 79251598643 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.10.009 Document Type: Article

Times cited : (89)

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