Improvement of characteristics of Ga-Doped ZnO grown by pulsed laser deposition using plasma-enhanced oxygen radicals

Journal of the Electrochemical Society

Volumn 155, Issue 9, 2008, Pages

  Oh, Min Suk ^a   Hwang, Dae Kue ^a   Seong, Dong Jun ^a   Hwang, Hyun Sang ^a   Park, Seong Ju ^a   Do Kim, Eun ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Research and Development Center   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; GALLIUM; LASERS; METALLIC FILMS; NONMETALS; OXYGEN; PLASMA DEPOSITION; PLASMAS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

CRYSTALLINE QUALITY; GA-DOPED ZNO; LOW TEMPERATURE; OXYGEN PLASMAS; OXYGEN RADICALS;

ZINC ALLOYS;

EID: 49149088872     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2952077     Document Type: Article

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