Total dose response of Ge MOS capacitors with HfO2/Dy 2O3 gate stacks

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 971-974

  Chen, D K ^a   Schrimpf, R D ^a   Fleetwood, D M ^a   Galloway, K F ^a   Pantelides, S T ^b   Dimoulas, A ^c   Mavrou, G ^c   Sotiropoulos, A ^c   Panayiotatos, Y ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Border traps; Dysprosium; Germanium MOS capacitors; HfO2; High K dielectric; Total dose radiation effects; Ultrathin gate oxide

Indexed keywords

DYSPROSIUM; ELECTRON TRAPS; HAFNIUM COMPOUNDS; IONIZING RADIATION; OXIDE FILMS;

BORDER TRAPS; GERMANIUM MOS CAPACITORS; HIGH-K DIELECTRIC; TOTAL DOSE RADIATION EFFECTS; ULTRATHIN GATE OXIDE;

MOS CAPACITORS;

EID: 34548125275     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.892116     Document Type: Conference Paper

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