SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 257, Issue 8, 2011, Pages 3440-3445

Study of reactions between HfO 2 and Si in thin films with precise identification of chemical states by XPS

(6) Wang, H a Wu, P a Li, X F a Chen, S a Zhang, S P a Song, B B a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

HfSiO films; High dielectrics; Interfacial reaction; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL ANALYSIS; DIELECTRIC MATERIALS; HAFNIUM OXIDES; PHOTOELECTRONS; PHOTONS; SILICA; SILICATES; SILICIDES; SILICON; SPUTTERING; SURFACE CHEMISTRY; THIN FILMS; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; CHEMICAL STATE; HAFNIUM SILICATES; HAFNIUM SILICIDE; POST ANNEALING; RADIO FREQUENCY SPUTTERING; STRUCTURAL CHARACTERISTICS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 78651348124 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.11.042 Document Type: Article

Times cited : (27)

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