Determination of the absolute thickness of ultrathin Al2O 3 overlayers on Si (100) substrate

Analytical Chemistry

Volumn 81, Issue 20, 2009, Pages 8519-8522

  Kim, Kyung Joong ^a   Jang, Jong Shik ^a   Lee, Joo Hee ^b   Jee, Yun Jung ^b   Jun, Chung Sam ^b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ATTENUATION LENGTHS; IN-SITU; MATRIX; OVERLAYERS; SI (100) SUBSTRATE; SI(1 0 0); TEM; ULTRA-THIN; XPS;

ALUMINUM; CALIBRATION; ELECTRONS; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM OXIDE; SILICON;

ARTICLE; CALIBRATION; ELECTRON; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70450042737     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac901463m     Document Type: Article

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