Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high- κ dielectric

Applied Physics Letters

Volumn 91, Issue 12, 2007, Pages

  Chen, Chun Heng ^c   Chang, Ingram Yin Ku ^c   Lee, Joseph Ya Min ^a   Chiu, Fu Chien ^b   Chiouand, Yan Kai ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b MING CHUAN UNIVERSITY   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; SILICA;

CELL-BASED ANALYTIC MODEL; DEFECT SIZES; WEIBULL SLOPES;

MOS CAPACITORS;

EID: 34648846744     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2786588     Document Type: Article

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