Molecular gating of silicon nanowire field-effect transistors with nonpolar analytes

ACS Nano

Volumn 6, Issue 1, 2012, Pages 335-345

  Paska, Yair ^a   Stelzner, Thomas ^b   Assad, Ossama ^a   Tisch, Ulrike ^a   Christiansen, Silke ^b,c   Haick, Hossam ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

molecular gating; nanowire; sensor; silicon; transistor

Indexed keywords

ANALYTES; BIOLOGICAL SPECIES; CHARGED SURFACE STATE; CONDUCTION CHANNEL; DETECTION PROCESS; DIELECTRIC MEDIUM; ENVIRONMENTAL MONITORING; HOME LAND SECURITY; INDIRECT EFFECTS; MOLECULAR GATING; NON-POLAR; NONPOLAR SPECIES; OFF-CURRENT; POLAR MOLECULES; SENSING APPLICATIONS; SENSING SIGNALS; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SUBTHRESHOLD SWING;

CARRIER MOBILITY; CHEMICAL ANALYSIS; ELECTRIC FIELDS; MESFET DEVICES; NANOWIRES; SENSORS; TRANSISTORS;

SILICON;

NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; PARTICLE SIZE; SEMICONDUCTOR; SIGNAL PROCESSING; STATIC ELECTRICITY; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; NANOTUBES; PARTICLE SIZE; SIGNAL PROCESSING, COMPUTER-ASSISTED; SILICON; STATIC ELECTRICITY; TRANSISTORS, ELECTRONIC;

EID: 84856204432     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn203653h     Document Type: Article

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