Evaluation of a gate capacitance in the Sub-aF range for a chemical field-effect transistor with a Si nanowire channel

IEEE Transactions on Nanotechnology

Volumn 10, Issue 5, 2011, Pages 1172-1179

  Clément, Nicolas ^a,b   Nishiguchi, Katsuhiko ^c   Fujiwara, Akira ^c   Vuillaume, Dominique ^a,b  

^a CNRS   (France)

^b UNIV LILLE   (France)

^c NTT CORPORATION   (Japan)

Author keywords

Chemical field effect transistor (CHEMFETs); metrology; nanotechnology; nanowires (NWs)

Indexed keywords

CHANNEL LENGTH; CLASSICAL MODEL; CURRENT CHARACTERISTIC; DE-TRAPPING; DIELECTRIC POLARIZATION; DOUBLE GATE; FIELD-EFFECT; GATE CAPACITANCE; KEYPOINTS; LOW TEMPERATURES; NANOSCALE WIRES; SENSORS APPLICATIONS; SI NANOWIRE; SINGLE ELECTRON;

CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTORS; ELECTRON MOBILITY; MESFET DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NANOWIRES; TELEGRAPH; TRANSISTORS; WIRE;

CAPACITANCE;

EID: 80052636606     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2123913     Document Type: Article

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