SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 86, Issue 2, 2007, Pages 187-191

Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires

(3) Schmidt, V a Senz, S a Gosele U a

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; NANOSTRUCTURED MATERIALS; SILICA;

CHARGE DENSITY; DOPANT DENSITY; NANOWIRES;

INTERFACES (MATERIALS);

EID: 33845289804 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3746-2 Document Type: Article

Times cited : (135)

References (35)

1
- 36149022345
- W. Shockley, G.L. Pearson, Phys. Rev. 74, 232 (1948)
- (1948) Phys. Rev. , vol.74 , pp. 232
- Shockley, W.¹ Pearson, G.L.²

2
- 19944366262
- R. Calarco, M. Marso, T. Richter, A.I. Aykanat, R. Meijers, A. v. d. Hart, T. Stoica, H. Lüth, Nano Lett. 5, 981 (2005)
- (2005) Nano Lett. , vol.5 , pp. 981
- Calarco, R.¹ Marso, M.² Richter, T.³ Aykanat, A.I.⁴ Meijers, R.⁵ Hart, A.V.D.⁶ Stoica, T.⁷ Lüth, H.⁸

3
- 31044449712
- K. Seo, S. Sharma, A.A. Yasseri, D.R. Stewart, T.I. Kamins, Electrochem. Solid State Lett. 9, G69 (2006)
- (2006) Electrochem. Solid State Lett. , vol.9
- Seo, K.¹ Sharma, S.² Yasseri, A.A.³ Stewart, D.R.⁴ Kamins, T.I.⁵

4
- 33746910200
- T. Stoica, R.J. Meijers, R. Calarco, T. Richter, E. Sutter, H. Lüth, Nano Lett. 6, 1541 (2006)
- (2006) Nano Lett. , vol.6 , pp. 1541
- Stoica, T.¹ Meijers, R.J.² Calarco, R.³ Richter, T.⁴ Sutter, E.⁵ Lüth, H.⁶

5
- 33744540414
- I. Kimukin, M.S. Islam, R.S. Williams, Nanotechnology 17, S240 (2006)
- (2006) Nanotechnology , vol.17
- Kimukin, I.¹ Islam, M.S.² Williams, R.S.³

6
- 31644450343
- M.H.M. van Weert, O. Wunnike, A.L. Roest, T.J. Eijkemans, A.Y. Silov, J.E.M. Haverkort, G.W. 't Hooft, E.P.A.M. Bakkers, Appl. Phys. Lett. 88, 043 109 (2006)
- (2006) Appl. Phys. Lett. , vol.88 , pp. 043109
- Van Weert, M.H.M.¹ Wunnike, O.² Roest, A.L.³ Eijkemans, T.J.⁴ Silov, A.Y.⁵ Haverkort, J.E.M.⁶ 'T Hooft, G.W.⁷ Bakkers, E.P.A.M.⁸

7
- 19944379818
- V. Schmidt, S. Senz, U. Gösele, Nano Lett. 5, 931 (2005)
- (2005) Nano Lett. , vol.5 , pp. 931
- Schmidt, V.¹ Senz, S.² Gösele, U.³

8
- 0033737136
- Y. Cui, X. Duan, J. Hu, C.M. Lieber, J. Phys. Chem. B 104, 5213 (2000)
- (2000) J. Phys. Chem. B , vol.104 , pp. 5213
- Cui, Y.¹ Duan, X.² Hu, J.³ Lieber, C.M.⁴

9
- 10444271035
- G. Zheng, W. Lu, S. Jin, C.M. Lieber, Adv. Mater. 16, 1890 (2004)
- (2004) Adv. Mater. , vol.16 , pp. 1890
- Zheng, G.¹ Lu, W.² Jin, S.³ Lieber, C.M.⁴

10
- 28144450590
- C. Yang, Z. Zhong, C.M. Lieber, Science 310, 1304 (2005)
- (2005) Science , vol.310 , pp. 1304
- Yang, C.¹ Zhong, Z.² Lieber, C.M.³

11
- 84886361962
- B.E. Deal. IEEE Trans. Electron. Dev. 27, 606 (1980)
- (1980) IEEE Trans. Electron. Dev. , vol.27 , pp. 606
- Deal, B.E.¹

12
- 0003610719
- Wiley, New York
- E.H. Nicollian, J.R. Brews, MOS (Metal. Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982)
- (1982) MOS (Metal. Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

13
- 0000039350
- R.H. Silsbee, J. Appl. Phys. 32, 1459 (1961)
- (1961) J. Appl. Phys. , vol.32 , pp. 1459
- Silsbee, R.H.¹

14
- 36849130064
- R.A. Weeks, J. Appl. Phys. 27, 1376 (1956)
- (1956) J. Appl. Phys. , vol.27 , pp. 1376
- Weeks, R.A.¹

15
- 25044460648
- D.L. Griscom, Phys. Rev. B 22, 4192 (1980)
- (1980) Phys. Rev. B , vol.22 , pp. 4192
- Griscom, D.L.¹

16
- 0021427238
- P.M. Lenahan, P.V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984)
- (1984) J. Appl. Phys. , vol.55 , pp. 3495
- Lenahan, P.M.¹ Dressendorfer, P.V.²

17
- 0003032815
- Y. Nishi, Japan. J. Appl. Phys. 5, 333 (1966)
- (1966) Japan. J. Appl. Phys. , vol.5 , pp. 333
- Nishi, Y.¹

18
- 84944614096
- Y. Nishi, Japan. J. Appl. Phys. 10, 52 (1971)
- (1971) Japan. J. Appl. Phys. , vol.10 , pp. 52
- Nishi, Y.¹

19
- 84950554121
- Y. Nishi, K. Tanaka, A. Ohwada, Japan. J. Appl. Phys. 11, 85 (1972)
- (1972) Japan. J. Appl. Phys. , vol.11 , pp. 85
- Nishi, Y.¹ Tanaka, K.² Ohwada, A.³

20
- 0018518071
- P.J. Caplan, E.H. Poindexter, B.E. Deal, R.R. Razouk, J. Appl. Phys. 50, 5847 (1979)
- (1979) J. Appl. Phys. , vol.50 , pp. 5847
- Caplan, P.J.¹ Poindexter, E.H.² Deal, B.E.³ Razouk, R.R.⁴

21
- 0019529879
- E.H. Poindexter, P.J. Caplan, B.E. Deal, R.R. Razouk, J. Appl. Phys. 52, 879 (1981)
- (1981) J. Appl. Phys. , vol.52 , pp. 879
- Poindexter, E.H.¹ Caplan, P.J.² Deal, B.E.³ Razouk, R.R.⁴

22
- 20844441892
- P.M. Lenahan, P.V. Dressendorfer, Appl. Phys. Lett. 41, 542 (1982)
- (1982) Appl. Phys. Lett. , vol.41 , pp. 542
- Lenahan, P.M.¹ Dressendorfer, P.V.²

23
- 0020718887
- P.M. Lenahan, P.V. Dressendorfer, J. Appl. Phys. 54, 1457 (1983)
- (1983) J. Appl. Phys. , vol.54 , pp. 1457
- Lenahan, P.M.¹ Dressendorfer, P.V.²

24
- 0021160952
- P.M. Lenahan, P.V. Dressendorfer, Appl. Phys. Lett. 44, 96 (1984)
- (1984) Appl. Phys. Lett. , vol.44 , pp. 96
- Lenahan, P.M.¹ Dressendorfer, P.V.²

25
- 36549096569
- Y.Y. Kim, P.M. Lenahan, J. Appl. Phys. 64, 3551 (1988)
- (1988) J. Appl. Phys. , vol.64 , pp. 3551
- Kim, Y.Y.¹ Lenahan, P.M.²

26
- 36749113463
- N.M. Johnson, U.K. Biegelsen, M.D. Moyer, S.T. Chang, E.H. Poindexter, P.J. Caplan, Appl. Phys. Lett. 43, 563 (1983)
- (1983) Appl. Phys. Lett. , vol.43 , pp. 563
- Johnson, N.M.¹ Biegelsen, U.K.² Moyer, M.D.³ Chang, S.T.⁴ Poindexter, E.H.⁵ Caplan, P.J.⁶

27
- 0021517669
- C. Munakata, S. Nishimatsu, N. Honma, K. Yagi, Japan. J. Appl. Phys. 23, 1451 (1984)
- (1984) Japan. J. Appl. Phys. , vol.23 , pp. 1451
- Munakata, C.¹ Nishimatsu, S.² Honma, N.³ Yagi, K.⁴

28
- 0022740053
- C. Munakata, S. Nishimatsu, Japan. J. Appl. Phys. 25, 807 (1986)
- (1986) Japan. J. Appl. Phys. , vol.25 , pp. 807
- Munakata, C.¹ Nishimatsu, S.²

29
- 0027680468
- J.S. Lyo, K.S. Nam, C. Lee, Japan. J. Appl. Phys. 32, 4393 (1993)
- (1993) Japan. J. Appl. Phys. , vol.32 , pp. 4393
- Lyo, J.S.¹ Nam, K.S.² Lee, C.³

30
- 0022600166
- P.J. McWhorter, P.S. Winokur, Appl. Phys. Lett. 48, 133 (1986)
- (1986) Appl. Phys. Lett. , vol.48 , pp. 133
- McWhorter, P.J.¹ Winokur, P.S.²

31
- 0038089462
- D.M. Fleetwood, Appl. Phys. Lett. 60, 2883 (1992)
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2883
- Fleetwood, D.M.¹

32
- 21544480403
- D.M. Fleetwood, P.S. Winokur, R.A. Reber, T.L. Meisenheimer, J.R. Schwank, M.R. Shaneyfelt, L.C. Riewe, J. Appl. Phys. 73, 5058 (1993)
- (1993) J. Appl. Phys. , vol.73 , pp. 5058
- Fleetwood, D.M.¹ Winokur, P.S.² Reber, R.A.³ Meisenheimer, T.L.⁴ Schwank, J.R.⁵ Shaneyfelt, M.R.⁶ Riewe, L.C.⁷

33
- 0012167151
- R.B. Lauglin, J.D. Joannopoulos, D.J. Chadi, Phys. Rev. B 21, 5733 (1980)
- (1980) Phys. Rev. B , vol.21 , pp. 5733
- Lauglin, R.B.¹ Joannopoulos, J.D.² Chadi, D.J.³

34
- 0004005306
- Wiley. New York
- S.M. Sze, Physics of Semiconductor Devices (Wiley. New York, 1981), p. 385
- (1981) Physics of Semiconductor Devices , pp. 385
- Sze, S.M.¹

35
- 0015481573
- M.H. White, J.R. Cricchi, IEEE Trans. Electron. Dev. 19, 1280 (1972)
- (1972) IEEE Trans. Electron. Dev. , vol.19 , pp. 1280
- White, M.H.¹ Cricchi, J.R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.