Double-gate nanowire field effect transistor for a biosensor

Nano Letters

Volumn 10, Issue 8, 2010, Pages 2934-2938

  Ahn, Jae Hyuk ^a   Choi, Sung Jin ^a   Han, Jin Woo ^a   Park, Tae Jung ^a   Lee, Sang Yup ^a,b,c,d   Choi, Yang Kyu ^a,b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Department of Chemical and Biomolecular Engineering ^*  (South Korea)

^c BioProcess Engineering Research Center   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

avian influenza (AI); biosensor; Double gate; field effect transistor; FinFET; nanowire; sensitivity

Indexed keywords

AVIAN INFLUENZA; AVIAN INFLUENZA (AI); BIOSENSOR APPLICATIONS; CHANNEL POTENTIAL; CHARGE EFFECT; DETECTION SENSITIVITY; DOUBLE-GATE; NANOWIRE FET; POSITIVE BIAS; SENSING WINDOWS; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS;

ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MESFET DEVICES; NANOWIRES; VOLTAGE REGULATORS;

BIOSENSORS;

NANOWIRE;

ARTICLE; GENETIC PROCEDURES;

BIOSENSING TECHNIQUES; NANOWIRES;

EID: 77955570694     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1010965     Document Type: Article

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