Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer

ACS Nano

Volumn 4, Issue 2, 2010, Pages 999-1011

  Takulapalli, Bharath R ^a,b  

^a AZ 85281   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Exponential transduction; FDEC; Field effect; PH sensing; Selectivity; Sensitivity; Sensors

Indexed keywords

ANALYTICAL EQUATIONS; CHARGE COUPLING; EXPONENTIAL INCREASE; FDEC; FIELD EFFECTS; FLOATING GATES; FULLY DEPLETED SILICON-ON-INSULATOR; FULLY DEPLETED SOI; GASPHASE; INTERFACE DEFECTS; INVERSION CHANNELS; LIQUID PHASE; MOLECULAR BINDING; MOLECULAR MONOLAYER; MOLECULAR SENSING; MOS-FET; N-CHANNEL; NEGATIVE CHARGE; NUMERICAL SIMULATION; PH SENSING; SCHOTTKY; SENSITIVE DEVICES; SENSOR ARCHITECTURES; SENSOR CONCEPTS; SENSOR DEVICE; ULTRAHIGH SENSITIVITY;

BACTERIOPHAGES; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; MONOLAYERS; PH EFFECTS; PH SENSORS; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SIGNAL TRANSDUCTION; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

AMINE; OXIDE; SILICON;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL MODEL; CHEMISTRY; COMPUTER PROGRAM; ELECTRON; INSTRUMENTATION; PH; SEMICONDUCTOR; TRANSDUCER;

AMINES; CHEMISTRY TECHNIQUES, ANALYTICAL; ELECTRONS; HYDROGEN-ION CONCENTRATION; MODELS, CHEMICAL; OXIDES; SILICON; SOFTWARE; TRANSDUCERS; TRANSISTORS, ELECTRONIC;

EID: 77649158857     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn900901f     Document Type: Conference Paper

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