Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 665-667

  Choi, Luryi ^a   Hong, Byoung Hak ^a   Jung, Young Chai ^a   Cho, Keun Hwi ^b   Yeo, Kyoung Hwan ^b   Kim, Dong Won ^b   Jin, Gyo Young ^b   Oh, Kyung Seok ^b   Lee, Won Seong ^b   Song, Sang Hun ^c   Rieh, Jae Sung ^a   Whang, Dong Mok ^d   Hwang, Sung Woo ^a  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Chung Ang University   (South Korea)

^d Sungkyunkwan University   (South Korea)

Author keywords

Gate all around (GAA); Mobility degradation factor; Nanowire; Series resistance; Silicon

Indexed keywords

DEGRADATION; GALLIUM ALLOYS; MOSFET DEVICES; NANOWIRES;

ALL-AROUND GATE; CONTACT REGIONS; DEGRADATION FACTOR; DEGRADATION MODEL; ELECTRON CHANNEL; ELECTRON FLOW; GATE-ALL-AROUND; GATE-ALL-AROUND (GAA); INTERFACE SCATTERING; MOBILITY DEGRADATION; MOBILITY-DEGRADATION FACTOR; MOSFETS; ORDER OF MAGNITUDE; SATURATION CURRENT; SERIES RESISTANCE; SERIES RESISTANCES; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; STRONG INVERSION;

FIELD EFFECT TRANSISTORS;

EID: 67649321634     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2019977     Document Type: Article

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